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| Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.70.1 q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 900 1000 900 1000 800 7 5 3 1 40 2 150 -55 to +150 Unit V 4.20.2 s Features 16.70.3 10.00.2 5.50.2 4.20.2 2.70.2 7.50.2 3.10.1 4.0 1.70.2 Solder Dip 1.30.2 1.050.1 0.80.1 0.5-0.1 2.540.3 +0.2 Parameter Collector to base voltage Collector to 2SC3979 2SC3979A 2SC3979 Symbol VCBO VCES VCEO VEBO ICP IC IB 14.00.5 s Absolute Maximum Ratings 5.080.5 emitter voltage 2SC3979A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V V A A A W C C 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(b) PC Tj Tstg s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3979 2SC3979A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A VCE = 5V, IC = 0.15A, f = 1MHz IC = 0.8A, IB1 = 0.16A, IB2 = - 0.32A, VCC = 250V 10 0.7 2.5 0.3 800 8 6 1.5 1.5 V V MHz s s s min typ max 50 50 50 Unit A A V 1 Power Transistors PC -- Ta 60 6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 5 2SC3979, 2SC3979A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 25C 0.01 0.01 0.03 0.1 0.3 1 3 10 TC=100C -25C VCE(sat) -- IC Collector power dissipation PC (W) 50 (1) 40 Collector current IC (A) 4 IB=900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA 1 100mA 30 3 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4) 2 10 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=5 1000 VCE=5V 100 fT -- IC VCE=5V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 1 3 10 30 10 100 10 3 30 TC=100C 25C -25C 3 1 TC=-25C 25C 100C 10 1 0.3 3 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.3 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C tstg Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 300 Collector current IC (A) 10 3 1 0.3 tf 0.1 0.03 ton 10 3 1 0.3 0.1 0.03 0.01 ICP t=1ms IC 10ms DC 100 30 10 3 1 1 3 10 30 100 0.01 0 0.4 0.8 1.2 1.6 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 Lcoil=100H IC/IB=5 (IB1=-IB2) TC=25C 2SC3979, 2SC3979A Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 2SC3979A 2SC3979 ICP Vin IC -IB2 VCC tW Vclamp 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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